Devices having gate-to-gate isolation structures and methods of manufacture are provided. The method includes forming a plurality of isolation structures in pad films and an underlying substrate. The method further includes forming a plurality of fins including the isolation structures and a second plurality of fins including the two pad films and a portion of the underlying substrate, each of which are separated by a trench. The method further includes removing portions of the second plurality of fins resulting in a height lower than a height of the plurality of fins including the isolation structures. The method further includes forming gate electrodes within each trench, burying the second plurality of fins and abutting sides of the plurality of fins including the isolation structures. The plurality of fins including the isolation structures electrically and physically isolate adjacent gate electrode of the gate electrodes.