Invention Grant
- Patent Title: Method for making epitaxial structure
- Patent Title (中): 制造外延结构的方法
-
Application No.: US13276285Application Date: 2011-10-18
-
Publication No.: US08455336B2Publication Date: 2013-06-04
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Yang Wei , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN201110005809.X 20110112; CN201110025710.6 20110124; CN201110025768.0 20110124; CN201110025832.5 20110124; CN201110076867.1 20110329; CN201110076876.0 20110329; CN201110076886.4 20110329; CN201110076887.9 20110329; CN201110076893.4 20110329; CN201110076901.5 20110329; CN201110076903.4 20110329; CN201110077488.4 20110329; CN201110095149.9 20110415
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A carbon nanotube layer is placed on the epitaxial growth surface. A plurality of epitaxial crystal grains spaced from each other is epitaxially grown on the epitaxial growth surface. Also, the carbon nanotube layer can be further removed.
Public/Granted literature
- US20120178244A1 METHOD FOR MAKING EPITAXIAL STRUCTURE Public/Granted day:2012-07-12
Information query
IPC分类:
