Invention Grant
US08455338B2 Method of forming a semiconductor device introducing plural impurities to form plural wells
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形成引入多种杂质以形成多个阱的半导体器件的方法
- Patent Title: Method of forming a semiconductor device introducing plural impurities to form plural wells
- Patent Title (中): 形成引入多种杂质以形成多个阱的半导体器件的方法
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Application No.: US13094369Application Date: 2011-04-26
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Publication No.: US08455338B2Publication Date: 2013-06-04
- Inventor: Toshiya Nakamori
- Applicant: Toshiya Nakamori
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2010-102109 20100427
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method for forming a semiconductor device includes the following processes. A first well including a memory cell region of a semiconductor substrate is formed. A second well including a first peripheral circuit region of the semiconductor substrate is formed after forming the first well.
Public/Granted literature
- US20120100702A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2012-04-26
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