Invention Grant
- Patent Title: Method for fabricating semiconductor device with side junction
- Patent Title (中): 具有侧面接合的半导体器件的制造方法
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Application No.: US12960790Application Date: 2010-12-06
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Publication No.: US08455339B2Publication Date: 2013-06-04
- Inventor: Yun-Hyuck Ji
- Applicant: Yun-Hyuck Ji
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0065443 20100707
- Main IPC: H01L21/04
- IPC: H01L21/04
Abstract:
A method for fabricating a semiconductor device, including etching a substrate to form a trench, forming a junction region in the substrate under the trench, etching the bottom of the trench to a certain depth to form a side junction, and forming a bit line coupled to the side junction.
Public/Granted literature
- US20120009748A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH SIDE JUNCTION Public/Granted day:2012-01-12
Information query
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