Invention Grant
US08455350B2 Integrated circuit system employing gate shield and/or ground shield 有权
集成电路系统采用门屏蔽和/或接地屏蔽

Integrated circuit system employing gate shield and/or ground shield
Abstract:
A method for manufacturing an integrated circuit system that includes: forming a substrate with an active region; depositing a material over the substrate to act as an etch stop and define a source and a drain; depositing a first dielectric over the substrate; processing the first dielectric to form features within the first dielectric including a shield; and depositing fill within the features to electrically connect the shield to the source of the active region by a single process step.
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