Invention Grant
US08455350B2 Integrated circuit system employing gate shield and/or ground shield
有权
集成电路系统采用门屏蔽和/或接地屏蔽
- Patent Title: Integrated circuit system employing gate shield and/or ground shield
- Patent Title (中): 集成电路系统采用门屏蔽和/或接地屏蔽
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Application No.: US11465793Application Date: 2006-08-18
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Publication No.: US08455350B2Publication Date: 2013-06-04
- Inventor: Xavier Seah Teo Leng
- Applicant: Xavier Seah Teo Leng
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Ishimaru & Associates LLP
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
A method for manufacturing an integrated circuit system that includes: forming a substrate with an active region; depositing a material over the substrate to act as an etch stop and define a source and a drain; depositing a first dielectric over the substrate; processing the first dielectric to form features within the first dielectric including a shield; and depositing fill within the features to electrically connect the shield to the source of the active region by a single process step.
Public/Granted literature
- US20080042236A1 INTEGRATED CIRCUIT SYSTEM EMPLOYING GATE SHIELD AND/OR GROUND SHIELD Public/Granted day:2008-02-21
Information query
IPC分类: