Invention Grant
- Patent Title: Layouts of POLY cut openings overlapping active regions
- Patent Title (中): POLY切割开口与活跃区域重叠的布局
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Application No.: US13081115Application Date: 2011-04-06
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Publication No.: US08455354B2Publication Date: 2013-06-04
- Inventor: Jung-Hsuan Chen , Yen-Huei Chen , Li-Chun Tien , Hung-Jen Liao
- Applicant: Jung-Hsuan Chen , Yen-Huei Chen , Li-Chun Tien , Hung-Jen Liao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
A method of forming integrated circuits includes forming a mask layer over a gate electrode line, wherein the gate electrode line is over a well region of a semiconductor substrate; forming an opening in the mask layer, wherein a portion of the gate electrode line and a well pickup region of the well region are exposed through the opening; and removing the portion of the gate electrode line through the opening.
Public/Granted literature
- US20120258592A1 Layouts of POLY Cut Openings Overlapping Active Regions Public/Granted day:2012-10-11
Information query
IPC分类:
