Invention Grant
- Patent Title: Method of manufacturing via hole in a semiconductor device
- Patent Title (中): 在半导体器件中制造通孔的方法
-
Application No.: US13227577Application Date: 2011-09-08
-
Publication No.: US08455358B2Publication Date: 2013-06-04
- Inventor: Kohei Miki
- Applicant: Kohei Miki
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2010-248451 20101105
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A first metal mask has a portion exposed at an opening of a second metal mask. The second metal mask is formed to be thicker than the first metal mask. The thickness of the first and second metal masks is such that the etching at an opening of the first mask reaches a source electrode when the etching at the opening of the second mask substantially reaches a semiconductor device forming layer.
Public/Granted literature
- US20120115327A1 METHOD OF MANUFACTURING VIA HOLE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING VIA HOLES Public/Granted day:2012-05-10
Information query
IPC分类:
