Method for fabricating storage node of semiconductor device

Invention Grant

US08455360B2 Method for fabricating storage node of semiconductor device 有权

Title translation: 半导体器件存储节点的制作方法

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Patent Title: Method for fabricating storage node of semiconductor device
Patent Title (中): 半导体器件存储节点的制作方法
Application No.: US13073348

Application Date: 2011-03-28
Publication No.: US08455360B2

Publication Date: 2013-06-04
Inventor: Hyo Geun Yoon , Ji Yong Park , Sun Jin Lee
Applicant: Hyo Geun Yoon , Ji Yong Park , Sun Jin Lee
Applicant Address: KR Gyeonggi-do
Assignee: SK Hynix Inc.
Current Assignee: SK Hynix Inc.
Current Assignee Address: KR Gyeonggi-do
Agency: William Park & Associates Patent Ltd.
Priority: KR10-2010-0065590 20100707
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/44

Method for fabricating storage node of semiconductor device

Abstract:

A method for fabricating a storage node of a semiconductor device includes forming a sacrificial dielectric pattern with a storage node hole on a substrate, forming a support layer on the sacrificial dielectric pattern, forming a storage node, supported by the support layer, in the storage node hole, performing a full dip-out process to expose the outer wall of the storage node, and performing a cleaning process for removing or reducing a bridge-causing material formed on the surface of the support layer.

Abstract(Chinese):

一种用于制造半导体器件的存储节点的方法包括在衬底上形成具有存储节点孔的牺牲电介质图案，在牺牲电介质图案上形成支撑层，在存储器中形成由支撑层支撑的存储节点执行完全浸出处理以暴露存储节点的外壁，以及执行清洁处理以去除或减少形成在支撑层表面上的引起桥梁的材料。

Public/Granted literature

US20120009790A1 METHOD FOR FABRICATING STORAGE NODE OF SEMICONDUCTOR DEVICE Public/Granted day:2012-01-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）