Invention Grant
- Patent Title: Chemical mechanical polishing method
- Patent Title (中): 化学机械抛光方法
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Application No.: US13253947Application Date: 2011-10-05
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Publication No.: US08455362B2Publication Date: 2013-06-04
- Inventor: Feng Zhao , Wufeng Deng , Jingmin Zhao , Feng Chen , Chunliang Liu
- Applicant: Feng Zhao , Wufeng Deng , Jingmin Zhao , Feng Chen , Chunliang Liu
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International Corp.
- Current Assignee: Semiconductor Manufacturing International Corp.
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201110068908 20110322
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A chemical mechanical polishing method includes providing a device layer having a surface to be polished, polishing the surface using an alkaline grinding slurry, removing a residual layer that is been formed on the polished surface using an acid buffer, forming a passivation layer covering the polished surface of the device layer after the residual layer has been removed, and cleaning the passivation layer using deionized water. A semiconductor device thus fabricated has surfaces with excellent flatness, good manufacturing yield and long-term reliability.
Public/Granted literature
- US20120244706A1 CHEMICAL MECHANICAL POLISHING METHOD Public/Granted day:2012-09-27
Information query
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