Invention Grant
- Patent Title: Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor
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Application No.: US12993946Application Date: 2009-05-22
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Publication No.: US08455371B2Publication Date: 2013-06-04
- Inventor: Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
- Applicant: Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-134731 20080522
- International Application: PCT/JP2009/059413 WO 20090522
- International Announcement: WO2009/142289 WO 20091126
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C14/34 ; C04B35/64
Abstract:
Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.
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