Invention Grant
US08455372B2 Method for cleaning and passivating gallium arsenide surface autologous oxide and depositing AL203 dielectric
有权
用于清除和钝化砷化镓表面自氧化物和沉积AL203电介质的方法
- Patent Title: Method for cleaning and passivating gallium arsenide surface autologous oxide and depositing AL203 dielectric
- Patent Title (中): 用于清除和钝化砷化镓表面自氧化物和沉积AL203电介质的方法
-
Application No.: US13528509Application Date: 2012-06-20
-
Publication No.: US08455372B2Publication Date: 2013-06-04
- Inventor: Qingqing Sun , Runchen Fang , Wen Yang , Pengfei Wang , Wei Zhang
- Applicant: Qingqing Sun , Runchen Fang , Wen Yang , Pengfei Wang , Wei Zhang
- Applicant Address: CN Shanghai
- Assignee: Fudan University
- Current Assignee: Fudan University
- Current Assignee Address: CN Shanghai
- Agency: Jenkins, Wilson, Taylor & Hunt, P.A.
- Priority: CN201110285677 20110923
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/00 ; C30B28/06

Abstract:
The present invention belongs to the technical field of semiconductor materials and specifically relates to a method for cleaning and passivizing gallium arsenide (GaAs) surface autologous oxide and depositing an Al2O3 dielectric. This method includes: use a new-type of sulfur passivant to react with the autologous oxide on the GaAs surface to clean it and generate a passive sulfide film to separate the GaAs from the outside environment, thus preventing the GaAs from oxidizing again; further cleaning the residuals such as autologous oxides and sulfides on the GaAs surface through the pretreatment reaction of the reaction source trimethyl aluminum (TMA) of the Al2O3 ALD with the GaAs surface, and then deposit high-quality Al2O3 dielectric through ALD as the gate dielectric which fully separates the GaAs from the outside environment. The present invention features a simple process and good effects, and can provide preconditions for manufacturing the GaAs devices.
Public/Granted literature
Information query
IPC分类: