Invention Grant
US08455420B2 Spin-on formulation and method for stripping an ion implanted photoresist
有权
用于剥离离子注入光刻胶的自旋配方和方法
- Patent Title: Spin-on formulation and method for stripping an ion implanted photoresist
- Patent Title (中): 用于剥离离子注入光刻胶的自旋配方和方法
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Application No.: US13535466Application Date: 2012-06-28
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Publication No.: US08455420B2Publication Date: 2013-06-04
- Inventor: Ali Afzali-Ardakani , Mahmoud Khojasteh , Ronald W. Nunes , George G. Totir
- Applicant: Ali Afzali-Ardakani , Mahmoud Khojasteh , Ronald W. Nunes , George G. Totir
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: G03F7/42
- IPC: G03F7/42

Abstract:
A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
Public/Granted literature
- US20120270763A1 SPIN-ON FORMULATION AND METHOD FOR STRIPPING AN ION IMPLANTED PHOTORESIST Public/Granted day:2012-10-25
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