Invention Grant
- Patent Title: High efficiency solar cell using IIIB material transition layers
- Patent Title (中): 高效太阳能电池采用IIIB材料过渡层
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Application No.: US12708969Application Date: 2010-02-19
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Publication No.: US08455756B2Publication Date: 2013-06-04
- Inventor: Michael Lebby , Andrew Clark
- Applicant: Michael Lebby , Andrew Clark
- Applicant Address: US CA Palo Alto
- Assignee: Translucent, Inc.
- Current Assignee: Translucent, Inc.
- Current Assignee Address: US CA Palo Alto
- Agency: Parsons & Goltry
- Agent Robert A. Parsons; Michael W. Goltry
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A solar cell including a base of single crystal silicon with a cubic crystal structure and a single crystal layer of a second material with a higher bandgap than the bandgap of silicon. First and second single crystal transition layers are positioned in overlying relationship with the layers graduated from a cubic crystal structure at one surface to a hexagonal crystal structure at an opposed surface. The first and second transition layers are positioned between the base and the layer of second material with the one surface lattice matched to the base and the opposed surface lattice matched to the layer of second material.
Public/Granted literature
- US20110203666A1 HIGH EFFICIENCY SOLAR CELL USING IIIB MATERIAL TRANSITION LAYERS Public/Granted day:2011-08-25
Information query
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