Invention Grant
US08455829B2 Series diode electro-thermal circuit for ultra sensitive silicon sensor
有权
用于超灵敏硅传感器的串联二极管电热回路
- Patent Title: Series diode electro-thermal circuit for ultra sensitive silicon sensor
- Patent Title (中): 用于超灵敏硅传感器的串联二极管电热回路
-
Application No.: US12693731Application Date: 2010-01-26
-
Publication No.: US08455829B2Publication Date: 2013-06-04
- Inventor: Nathan Bluzer
- Applicant: Nathan Bluzer
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: G01J5/02
- IPC: G01J5/02

Abstract:
Electro-thermal feedback is utilized for reducing the effective thermal conductance between the detector stage of a bolometer pixel in a thermal radiation sensor assembly and the environment through its mechanical support structure and electrical interconnects, thereby coming closer to achieving thermal conductance limited primarily through photon radiation. Minimization of the effective thermal conductance associated with the mechanical support structure and electrical interconnects is achieved by electro-thermal feedback that adjusts the temperature of an intermediate stage and the mechanical support structure and electrical interconnects, connecting it to the detector stage, to equal the temperature of the bolometer pixel's detector stage (i.e., by active thermal isolation). Increased temperature sensitivity is preferably achieved through temperature sensing with reverse biased Schottky diodes connected in series.
Public/Granted literature
- US20110180710A1 SERIES DIODE ELECTRO-THERMAL CIRCUIT FOR ULTRA SENSITIVE SILICON SENSOR Public/Granted day:2011-07-28
Information query