Invention Grant
- Patent Title: Controlled placement of dopants in memristor active regions
- Patent Title (中): 抑制剂活性区域中掺杂物的控制放置
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Application No.: US13142583Application Date: 2009-01-26
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Publication No.: US08455852B2Publication Date: 2013-06-04
- Inventor: Nathaniel J. Quitoriano , Philip J. Kuekes , Jianhua Yang
- Applicant: Nathaniel J. Quitoriano , Philip J. Kuekes , Jianhua Yang
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2009/000516 WO 20090126
- International Announcement: WO2010/085225 WO 20100729
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
Various embodiments of the present invention are direct to nanoscale, reconfigurable memristor devices. In one aspect, a memristor device (500,600) comprises an active region (508,610) sandwiched between a first electrode (301) and a second electrode (302). The active region including a non-volatile dopant region (506,608) selectively formed and positioned within the active region.
Public/Granted literature
- US20110266510A1 Controlled Placement of Dopants in Memristor Active Regions Public/Granted day:2011-11-03
Information query
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