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US08455861B2 Graphene based switching device having a tunable bandgap 有权
基于石墨烯的开关装置具有可调谐带隙

Graphene based switching device having a tunable bandgap
Abstract:
A method of implementing bandgap tuning of a graphene-based switching device includes subjecting a bi-layer graphene to an electric field while simultaneously subjecting the bi-layer graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene.
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