Invention Grant
US08455864B2 Hybrid semiconductor electronic device having multiple material layers
失效
具有多个材料层的混合半导体电子器件
- Patent Title: Hybrid semiconductor electronic device having multiple material layers
- Patent Title (中): 具有多个材料层的混合半导体电子器件
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Application No.: US12939519Application Date: 2010-11-04
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Publication No.: US08455864B2Publication Date: 2013-06-04
- Inventor: Rene Wirtz , Silvia Rosselli , Gabriele Nelles , Nikolaus Knorr , Zoi Karipidou , Ameneh Bamedi Zilai
- Applicant: Rene Wirtz , Silvia Rosselli , Gabriele Nelles , Nikolaus Knorr , Zoi Karipidou , Ameneh Bamedi Zilai
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: EP09175838 20091112
- Main IPC: H01L51/05
- IPC: H01L51/05
Abstract:
Method of manufacture of an electronic device, comprising providing a substrate comprising a semiconductor device stack, depositing a first material layer over the substrate, the first material layer being an insulating layer, depositing an active organic material layer over the first material layer, depositing a second material layer over the active organic material layer, the second material layer being an insulating layer.
Public/Granted literature
- US20110108816A1 ELECTRONIC HYBRID DEVICE Public/Granted day:2011-05-12
Information query
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