Invention Grant
- Patent Title: Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition
- Patent Title (中): 高品质N面氮化镓，氮化铟和氮化铝及其合金的金属有机化学气相沉积异质外延生长方法
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Application No.: US13444011Application Date: 2012-04-11
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Publication No.: US08455885B2Publication Date: 2013-06-04
- Inventor: Stacia Keller , Umesh K. Mishra , Nicholas A. Fichtenbaum
- Applicant: Stacia Keller , Umesh K. Mishra , Nicholas A. Fichtenbaum
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
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