Invention Grant
- Patent Title: Photonic-crystal light emitting diode and method of manufacture
- Patent Title (中): 光子晶体发光二极管及其制造方法
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Application No.: US12569844Application Date: 2009-09-29
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Publication No.: US08455894B1Publication Date: 2013-06-04
- Inventor: Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall
- Applicant: Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall
- Applicant Address: US CA Fremont
- Assignee: SORAA, Inc.
- Current Assignee: SORAA, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L33/02
- IPC: H01L33/02
Abstract:
A high efficiency photonic-crystal light emitting diode comprises a flip-chipped stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1. Each layer has a high crystalline quality, with a dislocation density below about 105 cm−2. The backside of the stack, exposed by removal of the original substrate, has a photonic crystal pattern for improved light extraction.
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