Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
-
Application No.: US13274759Application Date: 2011-10-17
-
Publication No.: US08455905B2Publication Date: 2013-06-04
- Inventor: Masaki Fujikane , Akira Inoue , Toshiya Yokogawa
- Applicant: Masaki Fujikane , Akira Inoue , Toshiya Yokogawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2010-234544 20101019
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
Provided is a light-emitting device including: a nitride semiconductor light-emitting element (402) which radiates optically polarized light; and a light emission control layer (404) which covers the light emission surface of the nitride semiconductor light-emitting element (402) and which contains a resin and non-fluorescent particles dispersed in the resin, in which the light emission control layer (404) contains the non-fluorescent particles at a proportion of 0.01 vol % or more and 10 vol % or less, and the non-fluorescent particles have a diameter of 30 nm or more and 150 nm or less.
Public/Granted literature
- US20120091490A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2012-04-19
Information query
IPC分类: