Invention Grant
- Patent Title: Semiconductor light-emitting device with improved light extraction efficiency
- Patent Title (中): 具有提高光提取效率的半导体发光器件
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Application No.: US13286881Application Date: 2011-11-01
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Publication No.: US08455906B2Publication Date: 2013-06-04
- Inventor: Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
- Applicant: Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Volpe And Koenig, P.C.
- Priority: KR10-2004-0089313 20041104
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/0236
Abstract:
The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
Public/Granted literature
- US20120043557A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY Public/Granted day:2012-02-23
Information query
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