Invention Grant
- Patent Title: Semiconductor light emitting devices including flexible unitary film on aluminum nitride substrate
- Patent Title (中): 半导体发光器件包括氮化铝衬底上的柔性单片膜
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Application No.: US13356046Application Date: 2012-01-23
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Publication No.: US08455909B2Publication Date: 2013-06-04
- Inventor: Gerald H. Negley
- Applicant: Gerald H. Negley
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Meyers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L33/56
- IPC: H01L33/56 ; H01L33/58
Abstract:
Semiconductor light emitting devices include an aluminum nitride substrate, a light emitting diode on a face of the substrate and flexible silicone film that includes a silicone lens on the face of the substrate. The light emitting diode emits light through the silicone lens.
Public/Granted literature
- US20120119221A1 SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING FLEXIBLE UNITARY FILM ON ALUMINUM NITRIDE SUBSTRATE Public/Granted day:2012-05-17
Information query
IPC分类:
