Invention Grant
- Patent Title: Micro electro mechanical device and manufacturing method thereof
- Patent Title (中): 微机电装置及其制造方法
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Application No.: US13248283Application Date: 2011-09-29
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Publication No.: US08455928B2Publication Date: 2013-06-04
- Inventor: Mayumi Yamaguchi , Konami Izumi
- Applicant: Mayumi Yamaguchi , Konami Izumi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2006-196403 20060719
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A micro structure and an electric circuit included in a micro electro mechanical device are manufactured over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes layers formed of the same insulating film as the gate insulating layer and the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.
Public/Granted literature
- US20120080727A1 MICRO ELECTRO MECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-04-05
Information query
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