Invention Grant
- Patent Title: Formation of III-V based devices on semiconductor substrates
- Patent Title (中): 在半导体衬底上形成基于III-V的器件
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Application No.: US12827709Application Date: 2010-06-30
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Publication No.: US08455929B2Publication Date: 2013-06-04
- Inventor: Chih-Hsin Ko , Clement Hsingjen Wann
- Applicant: Chih-Hsin Ko , Clement Hsingjen Wann
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/085
- IPC: H01L27/085
Abstract:
A device includes a semiconductor substrate, and insulation regions in the semiconductor substrate. Opposite sidewalls of the insulation regions have a spacing between about 70 nm and about 300 nm. A III-V compound semiconductor region is formed between the opposite sidewalls of the insulation regions.
Public/Granted literature
- US20120001239A1 Formation of III-V Based Devices on Semiconductor Substrates Public/Granted day:2012-01-05
Information query
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