Invention Grant
US08455933B2 Image sensor using light-sensitive transparent oxide semiconductor material
有权
使用感光透明氧化物半导体材料的图像传感器
- Patent Title: Image sensor using light-sensitive transparent oxide semiconductor material
- Patent Title (中): 使用感光透明氧化物半导体材料的图像传感器
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Application No.: US12801392Application Date: 2010-06-07
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Publication No.: US08455933B2Publication Date: 2013-06-04
- Inventor: Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
- Applicant: Sung-ho Park , I-hun Song , Ji-hyun Hur , Sang-hun Jeon
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0132825 20091229
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.
Public/Granted literature
- US20110156114A1 Image sensor using light-sensitive transparent oxide semiconductor material Public/Granted day:2011-06-30
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