Invention Grant
US08455934B2 Image sensor having four-transistor or five-transistor pixels with reset noise reduction
失效
图像传感器具有复位噪声降低的四晶体管或五晶体管像素
- Patent Title: Image sensor having four-transistor or five-transistor pixels with reset noise reduction
- Patent Title (中): 图像传感器具有复位噪声降低的四晶体管或五晶体管像素
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Application No.: US12745290Application Date: 2008-11-25
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Publication No.: US08455934B2Publication Date: 2013-06-04
- Inventor: Pierre Fereyre , Simon Caruel
- Applicant: Pierre Fereyre , Simon Caruel
- Applicant Address: FR Saint Egreve
- Assignee: E2V Semiconductors
- Current Assignee: E2V Semiconductors
- Current Assignee Address: FR Saint Egreve
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: FR0708395 20071130
- International Application: PCT/EP2008/066149 WO 20081125
- International Announcement: WO2009/068526 WO 20090604
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
The invention relates to image sensors produced with CMOS technology, whose individual pixels, arranged in an array of rows and columns, each consist of a photodiode (PD1) associated with a charge storage region (N2) which receives the photogenerated charge before a charge readout phase. To eliminate the risk of introducing kTC-type noise into the signal, during the reset of the storage zone (N2) at the end of a readout cycle, the invention proposes that the storage zone be divided into two parts one of which (N2b), adjacent to the reset gate (G3), is covered by a diffused region (P2) of the same type of conductivity as the substrate in which the photodiode is formed, this region being brought to the fixed potential of the substrate, and the other (N2a) of which is not covered by such a region and is not adjacent to the reset gate.
Public/Granted literature
- US20100320516A1 IMAGE SENSOR HAVING FOUR-TRANSISTOR OR FIVE-TRANSISTOR PIXELS WITH RESET NOISE REDUCTION Public/Granted day:2010-12-23
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