Invention Grant
- Patent Title: Stacked metal fin cell
- Patent Title (中): 堆叠的金属细胞
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Application No.: US12974235Application Date: 2010-12-21
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Publication No.: US08455939B2Publication Date: 2013-06-04
- Inventor: Johann Alsmeier , Vinod Purayath , James Kai , George Matamis
- Applicant: Johann Alsmeier , Vinod Purayath , James Kai , George Matamis
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/336
Abstract:
A NAND device including a source, a drain and a channel located between the source and drain. The NAND device also includes a plurality of floating gates located over the channel and a plurality of electrically conducting fins. Each of the plurality of electrically conducting fins is located over one of the plurality of floating gates. The plurality of electrically conducting fins include a material other than polysilicon. The NAND device also includes a plurality of control gates. Each of the plurality of control gates is located adjacent to each of the plurality of floating gates and each of the plurality of electrically conducting fins.
Public/Granted literature
- US20120153376A1 STACKED METAL FIN CELL Public/Granted day:2012-06-21
Information query
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