Invention Grant
US08455940B2 Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device
有权
非易失性存储器件，非易失性存储器件的制造方法以及包括非易失性存储器件的存储器模块和系统
- Patent Title: Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device
- Patent Title (中): 非易失性存储器件，非易失性存储器件的制造方法以及包括非易失性存储器件的存储器模块和系统
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Application No.: US13100488Application Date: 2011-05-04
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Publication No.: US08455940B2Publication Date: 2013-06-04
- Inventor: Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
- Applicant: Jae-goo Lee , Young-woo Park , Byung-kwan You , Dong-sik Lee , Sang-yong Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2010-0048188 20100524; KR10-2010-0080886 20100820
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A nonvolatile memory device includes a substrate, a channel layer protruding from the substrate, a gate conductive layer surrounding the channel layer, a gate insulating layer disposed between the channel layer and the gate conductive layer, and a first insulating layer spaced apart from the channel layer and disposed on the top and bottom of the gate conductive layer. The gate insulating layer extends between the gate conductive layer and the first insulating layer.
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