Invention Grant
- Patent Title: Transistor arrangement with a first transistor and with a plurality of second transistors
- Patent Title (中): 具有第一晶体管和多个第二晶体管的晶体管布置
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Application No.: US12986784Application Date: 2011-01-07
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Publication No.: US08455948B2Publication Date: 2013-06-04
- Inventor: Rolf Weis
- Applicant: Rolf Weis
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/161
- IPC: H01L29/161 ; H01L27/088 ; H01L27/098 ; H01L29/20
Abstract:
A transistor arrangement includes a first transistor having a drift region and a number of second transistors, each having a source region, a drain region and a gate electrode. The second transistors are coupled in series to form a series circuit that is coupled in parallel with the drift region of the first transistor.
Public/Granted literature
- US20120175634A1 Transistor Arrangement with a First Transistor and with a Plurality of Second Transistors Public/Granted day:2012-07-12
Information query
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