Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12950493Application Date: 2010-11-19
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Publication No.: US08455951B2Publication Date: 2013-06-04
- Inventor: Toshiyuki Kosaka
- Applicant: Toshiyuki Kosaka
- Applicant Address: JP Yokohama-shi, Kanagawa
- Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee Address: JP Yokohama-shi, Kanagawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-140305 20080529
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
A semiconductor device includes a substrate having a rectangular shape, and a via hole that has an elliptic shape or a track shape having a linear portion in a long-axis direction of the track shape, a long axis of the elliptic shape or the track shape being arranged in a long-side direction of the substrate.
Public/Granted literature
- US20110084341A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-04-14
Information query
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