Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13017687Application Date: 2011-01-31
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Publication No.: US08455953B2Publication Date: 2013-06-04
- Inventor: Hiroki Fujii
- Applicant: Hiroki Fujii
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-020661 20100201
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8249 ; H01L29/739

Abstract:
A sinker layer is in contact with a first conductivity-type well and a second conductivity-type drift layer, respectively, and is separated from a first conductivity-type collector layer. A second conductivity-type diffusion layer (second second-conductivity-type high-concentration diffusion layer) is formed in the surface layer of the sinker layer. The second conductivity-type diffusion layer has a higher impurity concentration than that of the sinker layer. The second conductivity-type diffusion layer and the first conductivity-type collector layer are isolated from each other with an element isolation insulating film interposed therebetween.
Public/Granted literature
- US20110186907A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-08-04
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