Invention Grant
- Patent Title: Apparatus containing cobalt titanium oxide
- Patent Title (中): 含有二氧化钛钴的装置
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Application No.: US13311218Application Date: 2011-12-05
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Publication No.: US08455959B2Publication Date: 2013-06-04
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Electronic apparatus and methods of forming the electronic apparatus include cobalt titanium oxide on a substrate for use in a variety of electronic systems. The cobalt titanium oxide may be structured as one or more monolayers. The cobalt titanium oxide may be formed by a monolayer by monolayer sequencing process such as atomic layer deposition.
Public/Granted literature
- US20120074487A1 APPARATUS CONTAINING COBALT TITANIUM OXIDE Public/Granted day:2012-03-29
Information query
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