Invention Grant
US08455965B2 Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions 有权
包括磁性隧道结的顶部和底部电极的器件的制造和集成

  • Patent Title: Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions
  • Patent Title (中): 包括磁性隧道结的顶部和底部电极的器件的制造和集成
  • Application No.: US12627173
    Application Date: 2009-11-30
  • Publication No.: US08455965B2
    Publication Date: 2013-06-04
  • Inventor: Xia LiSeung H. Kang
  • Applicant: Xia LiSeung H. Kang
  • Applicant Address: US CA San Diego
  • Assignee: QUALCOMM Incorporated
  • Current Assignee: QUALCOMM Incorporated
  • Current Assignee Address: US CA San Diego
  • Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
  • Main IPC: H01L29/82
  • IPC: H01L29/82
Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions
Abstract:
An electronic device manufacturing process includes depositing a bottom electrode layer. Then an electronic device is fabricated on the bottom electrode layer. Patterning of the bottom electrode layer is performed after fabricating the electronic device and in a separate process from patterning a top electrode. A first dielectric layer is then deposited on the electronic device and the bottom electrode layer followed by a top electrode layer. The top electrode is then patterned in a separate process from the bottom electrode. Separately patterning the top and bottom electrodes improves yields by reducing voids in the dielectric material between electronic devices. One electronic device the manufacturing process is well-suited for is magnetic tunnel junctions (MTJs).
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