Semiconductor circuit structure and method of making the same

Invention Grant

US08455978B2 Semiconductor circuit structure and method of making the same 有权

Title translation: 半导体电路结构及制作方法

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Patent Title: Semiconductor circuit structure and method of making the same
Patent Title (中): 半导体电路结构及制作方法
Application No.: US12847374

Application Date: 2010-07-30
Publication No.: US08455978B2

Publication Date: 2013-06-04
Inventor: Sang-Yun Lee
Applicant: Sang-Yun Lee
Agent Greg L. Martinez
Main IPC: H01L23/02
IPC: H01L23/02 ; H01L21/31

Semiconductor circuit structure and method of making the same

Abstract:

A semiconductor circuit structure includes an interconnect region, and a material transfer region. The semiconductor circuit structure includes a conductive bonding region which couples the material transfer region to the interconnect region through a bonding interface. The conductive bonding region includes a barrier layer between a conductive layer and bonding layer. The bonding layer is positioned towards the material transfer region, and the conductive layer is positioned towards the interconnect region.

Abstract(Chinese):

半导体电路结构包括互连区域和材料转移区域。半导体电路结构包括通过接合界面将材料转移区域连接到互连区域的导电接合区域。导电接合区域包括在导电层和接合层之间的阻挡层。接合层朝向材料转移区域定位，并且导电层朝向互连区域定位。

Public/Granted literature

US20110291234A1 SEMICONDUCTOR CIRCUIT STRUCTURE AND METHOD OF MAKING THE SAME Public/Granted day:2011-12-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/02	.容器；封接（H01L23/12，H01L23/34，H01L23/48，H01L23/552优先）