Invention Grant
- Patent Title: Three dimensional integrated deep trench decoupling capacitors
- Patent Title (中): 三维集成深沟槽去耦电容器
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Application No.: US13369460Application Date: 2012-02-09
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Publication No.: US08455979B2Publication Date: 2013-06-04
- Inventor: Roger A. Booth, Jr. , Kangguo Cheng , Ravi M. Todi , Geng Wang
- Applicant: Roger A. Booth, Jr. , Kangguo Cheng , Ravi M. Todi , Geng Wang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Daniel Schnurmann
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method of forming an integrated circuit device includes forming a plurality of deep trench decoupling capacitors on a first substrate; forming a plurality of active circuit devices on a second substrate; bonding the second substrate to the first substrate; and forming electrical connections between the deep trench capacitors and the second substrate.
Public/Granted literature
- US20120133023A1 THREE DIMENSIONAL INTEGRATED DEEP TRENCH DECOUPLING CAPACITORS Public/Granted day:2012-05-31
Information query
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