Invention Grant
- Patent Title: Schottky-clamped bipolar transistor with reduced self heating
- Patent Title (中): 肖特基钳位的双极晶体管，自发热减少
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Application No.: US13178629Application Date: 2011-07-08
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Publication No.: US08455980B2Publication Date: 2013-06-04
- Inventor: Jeffrey A. Babcock
- Applicant: Jeffrey A. Babcock
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
The self heating of a high-performance bipolar transistor that is formed on a fully-isolated single-crystal silicon region of a silicon-on-insulator (SOI) structure is substantially reduced by forming a Schottky structure in the same fully-isolated single-crystal silicon region as the bipolar transistor is formed.
Public/Granted literature
- US20130009271A1 Schottky-Clamped Bipolar Transistor with Reduced Self Heating Public/Granted day:2013-01-10
Information query
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