Invention Grant
- Patent Title: Integrated circuit structure and method of forming the same
- Patent Title (中): 集成电路结构及其形成方法
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Application No.: US12946445Application Date: 2010-11-15
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Publication No.: US08455984B2Publication Date: 2013-06-04
- Inventor: Kee Wei Chung , Chiang Hung Lin , Neng Tai Shih
- Applicant: Kee Wei Chung , Chiang Hung Lin , Neng Tai Shih
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/48 ; H01L23/52
Abstract:
A method of forming an integrated circuit structure comprises the steps of: providing a semiconductor substrate having a first side and a second side opposite the first side; forming a hole extending from the first side of the semiconductor substrate into the semiconductor substrate; filling the hole with conductive material; thinning the second side of the semiconductor substrate to a first predetermined thickness, so that the bottom of the hole does not protrude from the second side of the semiconductor substrate; and etching the second side of the semiconductor substrate to a second predetermined thickness, thereby exposing the bottom of the hole.
Public/Granted literature
- US20120119355A1 INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2012-05-17
Information query
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