Invention Grant
- Patent Title: High power semiconductor device
- Patent Title (中): 大功率半导体器件
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Application No.: US13309754Application Date: 2011-12-02
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Publication No.: US08455997B2Publication Date: 2013-06-04
- Inventor: Hidetoshi Nakanishi , Yuji Miyazaki
- Applicant: Hidetoshi Nakanishi , Yuji Miyazaki
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-089353 20110413
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A semiconductor device includes an insulating substrate, a metal pattern formed on the insulating substrate, a power terminal bonded onto the metal pattern, and a plurality of power chips bonded onto the metal pattern. The plurality of power chips are all separated from the power terminal by a distance sufficient to thermally isolate the plurality of power chips from the power terminal.
Public/Granted literature
- US20120261811A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-10-18
Information query
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