Invention Grant
- Patent Title: Chemical vapor deposition of titanium
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Application No.: US12249774Application Date: 2008-10-10
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Publication No.: US08456007B2Publication Date: 2013-06-04
- Inventor: Gurtej Singh Sandhu , Donald L. Westmoreland
- Applicant: Gurtej Singh Sandhu , Donald L. Westmoreland
- Applicant Address: US NJ Jersey City
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NJ Jersey City
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
Public/Granted literature
- US20090039517A1 CHEMICAL VAPOR DEPOSITION OF TITANIUM Public/Granted day:2009-02-12
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