Invention Grant
- Patent Title: Semiconductor structure having an air-gap region and a method of manufacturing the same
- Patent Title (中): 具有气隙区域的半导体结构及其制造方法
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Application No.: US12707969Application Date: 2010-02-18
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Publication No.: US08456009B2Publication Date: 2013-06-04
- Inventor: Shu-Hui Su , Cheng-Lin Huang , Jiing-Feng Yang , Zhen-Cheng Wu , Ren-Guei Wu , Dian-Hau Chen , Yuh-Jier Mii
- Applicant: Shu-Hui Su , Cheng-Lin Huang , Jiing-Feng Yang , Zhen-Cheng Wu , Ren-Guei Wu , Dian-Hau Chen , Yuh-Jier Mii
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A semiconductor structure includes a first metal-containing layer, a dielectric capping layer, a second metal-containing layer, and a conductive pad. The first metal-containing layer includes a set of metal structures, a dielectric filler disposed to occupy a portion of the first metal-containing layer, and an air-gap region defined by at least the set of metal structures and the dielectric filler and abutting at least a portion of the set of metal structures. The second metal-containing layer includes at least a via plug electrically connected to a portion of the set of metal structures. The conductive pad and the via plug do not overlap the air-gap region.
Public/Granted literature
- US20110198757A1 SEMICONDUCTOR STRUCTURE HAVING AN AIR-GAP REGION AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-08-18
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