Invention Grant
- Patent Title: Filled through-silicon via with conductive composite material
- Patent Title (中): 用导电复合材料填充硅通孔
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Application No.: US13174794Application Date: 2011-07-01
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Publication No.: US08456017B2Publication Date: 2013-06-04
- Inventor: Ming-Ji Dai , Heng-Chieh Chien , Ming-Che Hsieh , Jui-Feng Hung , Ra-Min Tain , John H. Lau
- Applicant: Ming-Ji Dai , Heng-Chieh Chien , Ming-Che Hsieh , Jui-Feng Hung , Ra-Min Tain , John H. Lau
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100114689A 20110427
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased.
Public/Granted literature
- US20120273939A1 FILLED THROUGH-SILICON VIA AND THE FABRICATION METHOD THEREOF Public/Granted day:2012-11-01
Information query
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