Invention Grant
- Patent Title: Architecture for piezoelectric MEMS devices
- Patent Title (中): 压电MEMS器件的结构
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Application No.: US13013494Application Date: 2011-01-25
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Publication No.: US08456061B2Publication Date: 2013-06-04
- Inventor: Brady J. Gibbons , Chris Shelton , Peter Mardilovich , Tony S. Cruz-Uribe
- Applicant: Brady J. Gibbons , Chris Shelton , Peter Mardilovich , Tony S. Cruz-Uribe
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L41/09
- IPC: H01L41/09

Abstract:
A piezoelectric thin film device comprises a piezoelectric thin film having upper and lower surfaces and a defined tilted crystal morphology, a top electrode disposed on the upper surface, a substrate having a surface morphology that corresponds to the defined crystallographically tilted morphology, and a bottom electrode disposed between and crystallographically linked to both the lower surface of the piezoelectric thin film and the substrate surface, the bottom and top electrodes having a parallel planar configuration relative to the plane of the substrate and the defined crystallographically tilted morphology having a crystallographic c-axis direction oriented at a >0° angle relative to the normal to the plane of the electrodes; and method of making the device.
Public/Granted literature
- US20120187804A1 ARCHITECTURE FOR PIEZOELECTRIC MEMS DEVICES Public/Granted day:2012-07-26
Information query
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