A test structure is provided that utilizes a time division sampling technique along with a statistical modeling technique that uses metal-oxide-semiconductor field effect transistor (MOSFET) saturation and linear characteristics to measure the mean (average) and sigma (statistical characterization of the variation) of a large population of electrical characteristics of electrical devices (e.g., integrated circuits) at high speed. Such electrical characteristics or sampling parameters include drive currents, leakage, resistances, etc.