Invention Grant
US08456211B2 Slew rate control circuit and method thereof and slew rate control device
有权
压摆率控制电路及其方法和压摆率控制装置
- Patent Title: Slew rate control circuit and method thereof and slew rate control device
- Patent Title (中): 压摆率控制电路及其方法和压摆率控制装置
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Application No.: US12778132Application Date: 2010-05-12
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Publication No.: US08456211B2Publication Date: 2013-06-04
- Inventor: Chin-Yang Chen , Jian-Wen Chen
- Applicant: Chin-Yang Chen , Jian-Wen Chen
- Applicant Address: TW Hsinchu
- Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: H03K5/12
- IPC: H03K5/12

Abstract:
A slew rate control circuit is provided. The slew rate control circuit includes at least one switch and an inverter. A first end of the switch is coupled to a power terminal. A toggle end of the switch is coupled to a first control terminal. A second end of the switch is coupled to an output terminal. An output end of the inverter is coupled to the output terminal. An input end of the inverter is coupled to an input terminal. A voltage at the first control terminal conducts the switch to reduce the slew rate when a large voltage variation occurs at the output terminal. A method of controlling a slew rate and a slew rate control device are provided.
Public/Granted literature
- US20110279158A1 SLEW RATE CONTROL CIRCUIT AND METHOD THEREOF AND SLEW RATE CONTROL DEVICE Public/Granted day:2011-11-17
Information query
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