Invention Grant
- Patent Title: Negative charge pump
- Patent Title (中): 负电荷泵
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Application No.: US13338198Application Date: 2011-12-27
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Publication No.: US08456225B1Publication Date: 2013-06-04
- Inventor: Kenneth P. Snowdon
- Applicant: Kenneth P. Snowdon
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Grossman Tucker Perreault & Pfleger PLLC
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
Generally, this disclosure provides negative charge pump circuitry that is configured to supply a voltage that is less than a reference voltage (such as ground). The charge pump circuitry includes blocking circuitry that reduces or eliminates charge leakage so that a negative voltage may be developed at the output. The charge pump circuitry generally includes complimentary pairs of MOS switches that switch in a complimentary fashion according to charge developed on complimentary capacitors to provide a negative voltage power supply.
Public/Granted literature
- US20130162334A1 NEGATIVE CHARGE PUMP Public/Granted day:2013-06-27
Information query
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