Invention Grant
US08456558B2 Pixel circuit, a solid-state image sensing device, and a camera system that facilitates charge transfer within a pixel
有权
像素电路，固态图像感测装置和便于像素内的电荷转移的照相机系统
- Patent Title: Pixel circuit, a solid-state image sensing device, and a camera system that facilitates charge transfer within a pixel
- Patent Title (中): 像素电路，固态图像感测装置和便于像素内的电荷转移的照相机系统
-
Application No.: US12829807Application Date: 2010-07-02
-
Publication No.: US08456558B2Publication Date: 2013-06-04
- Inventor: Toshiyuki Nishihara
- Applicant: Toshiyuki Nishihara
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-172388 20090723
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335 ; H01L27/00
Abstract:
A pixel circuit includes: a photoelectric conversion device; a source-follower circuit; a transfer transistor that transfers charge generated in the photoelectric conversion device to an input node of the source-follower circuit; and a readout system that reads out a signal in response to the generated charge through the source-follower circuit, wherein the readout system floats the input node of the source-follower circuit and turns on the transfer transistor to transfer the signal charge to the input node, includes a function of turning off the transfer transistor, sensing an output node potential of the source-follower circuit, and reading out an output signal, and further includes an output modulation degree control function unit that temporarily reduces an output modulation degree of the source-follower circuit when the transfer transistor is turned on.
Public/Granted literature
- US20110019053A1 PIXEL CIRCUIT, SOLID-STATE IMAGE SENSING DEVICE, AND CAMERA SYSTEM Public/Granted day:2011-01-27
Information query
