Invention Grant
- Patent Title: Optical grid for high precision and high resolution method of wafer-scale nanofabrication
- Patent Title (中): 光栅高精度,高分辨率晶圆级纳米加工方法
-
Application No.: US13062832Application Date: 2009-09-09
-
Publication No.: US08456650B2Publication Date: 2013-06-04
- Inventor: Amit Lal , Norimasa Yoshimizu
- Applicant: Amit Lal , Norimasa Yoshimizu
- Applicant Address: US NY Ithaca
- Assignee: Cornell University
- Current Assignee: Cornell University
- Current Assignee Address: US NY Ithaca
- Agency: Bond, Schoeneck & King, PLLC
- Agent William Greener
- International Application: PCT/US2009/056400 WO 20090909
- International Announcement: WO2010/030698 WO 20100318
- Main IPC: G01B11/14
- IPC: G01B11/14

Abstract:
A wafer-scale nano-metrology system (10) for sensing position of a nanofabrication element (16) when illuminated by a patterned optical projection defining a grid or position measuring gauge includes a frequency stabilized laser emitter (12) configured to generate a laser emission at a selected frequency, where the laser emission forms a diverging beam configured to illuminate a selected area occupied by a target fabrication object (18) having a proximal surface. An optical pattern generator (14) is illuminated by laser (12) and generates a patterned optical projection grid or gauge for projection upon the target fabrication object (18). A movable tool or nanofabrication element (16) carries an optical sensor array (50), and the sensor array detect at least a portion of the optical projection grid, and, in response to that detection, generates grid position data for use in controlling the position of the tool (16).
Public/Granted literature
- US20110249275A1 OPTICAL GRID FOR HIGH PRECISION AND HIGH RESOLUTION METHOD OF WAFER-SCALE NANOFABRICATION Public/Granted day:2011-10-13
Information query