Invention Grant
US08456650B2 Optical grid for high precision and high resolution method of wafer-scale nanofabrication 有权
光栅高精度,高分辨率晶圆级纳米加工方法

  • Patent Title: Optical grid for high precision and high resolution method of wafer-scale nanofabrication
  • Patent Title (中): 光栅高精度,高分辨率晶圆级纳米加工方法
  • Application No.: US13062832
    Application Date: 2009-09-09
  • Publication No.: US08456650B2
    Publication Date: 2013-06-04
  • Inventor: Amit LalNorimasa Yoshimizu
  • Applicant: Amit LalNorimasa Yoshimizu
  • Applicant Address: US NY Ithaca
  • Assignee: Cornell University
  • Current Assignee: Cornell University
  • Current Assignee Address: US NY Ithaca
  • Agency: Bond, Schoeneck & King, PLLC
  • Agent William Greener
  • International Application: PCT/US2009/056400 WO 20090909
  • International Announcement: WO2010/030698 WO 20100318
  • Main IPC: G01B11/14
  • IPC: G01B11/14
Optical grid for high precision and high resolution method of wafer-scale nanofabrication
Abstract:
A wafer-scale nano-metrology system (10) for sensing position of a nanofabrication element (16) when illuminated by a patterned optical projection defining a grid or position measuring gauge includes a frequency stabilized laser emitter (12) configured to generate a laser emission at a selected frequency, where the laser emission forms a diverging beam configured to illuminate a selected area occupied by a target fabrication object (18) having a proximal surface. An optical pattern generator (14) is illuminated by laser (12) and generates a patterned optical projection grid or gauge for projection upon the target fabrication object (18). A movable tool or nanofabrication element (16) carries an optical sensor array (50), and the sensor array detect at least a portion of the optical projection grid, and, in response to that detection, generates grid position data for use in controlling the position of the tool (16).
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