Invention Grant
US08456856B2 Integrated circuit chip using top post-passivation technology and bottom structure technology 有权
集成电路芯片采用顶级后钝化技术和底层结构技术

Integrated circuit chip using top post-passivation technology and bottom structure technology
Abstract:
Integrated circuit chips and chip packages are disclosed that include an over-passivation scheme at a top of the integrated circuit chip and a bottom scheme at a bottom of the integrated circuit chip using a top post-passivation technology and a bottom structure technology. The integrated circuit chips can be connected to an external circuit or structure, such as ball-grid-array (BGA) substrate, printed circuit board, semiconductor chip, metal substrate, glass substrate or ceramic substrate, through the over-passivation scheme or the bottom scheme. Related fabrication techniques are described.
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