Invention Grant
US08456882B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
有权
用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
- Patent Title: Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
- Patent Title (中): 用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
-
Application No.: US13415261Application Date: 2012-03-08
-
Publication No.: US08456882B2Publication Date: 2013-06-04
- Inventor: Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
- Applicant: Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
- Applicant Address: US CA San Jose
- Assignee: Grandis, Inc.
- Current Assignee: Grandis, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Convergent Law Group LLP
- Main IPC: G11C5/08
- IPC: G11C5/08 ; G11C11/06 ; G11C11/14 ; G11C11/15
Abstract:
A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
Public/Granted literature
Information query
