According to one embodiment, a multi-level resistance change memory includes a memory cell includes first and second resistance change films connected in series, and a capacitor connected in parallel to the first resistance change film, a voltage pulse generating circuit generating a first voltage pulse with a first pulse width to divide a voltage of the first voltage pulse into the first and second resistance change films based on a resistance ratio thereof, and generating a second voltage pulse with a second pulse width shorter than the first pulse width to apply a voltage of the second voltage pulse to the second resistance change film by a transient response of the capacitor, and a control circuit which is stored multi-level data to the memory cell by using the first and second voltage pulses in a writing.